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Advance Technical Information
Polar3 TM HiPerFET TM
Power MOSFET
IXFN80N60P3
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
600V
66A
70m Ω
250ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
miniBLOC
E153432
G
S
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
600
600
V
V
D
S
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G = Gate
S = Source
D = Drain
I D25
I DM
I A
E AS
dv/dt
P D
T J
T JM
T stg
V ISOL
M d
Weight
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
50/60 Hz, RMS, t = 1minute
I ISOL ≤ 1mA, t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
66
200
40
2
35
960
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
A
A
A
J
V/ns
W
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Rectifier
Low Q G
Low R DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
Characteristic Values
Min. Typ. Max.
600
V
Applications
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 8mA
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 40A, Note 1
T J = 125 ° C
3.0
5.0 V
± 200 nA
50 μ A
4 mA
70 m Ω
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
? 2011 IXYS CORPORATION, All Rights Reserved
DS100356(07/11)
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